| Code | Model | Manufacturer | Package | Number of glue needles | Describe | Operate |
|---|---|---|---|---|---|---|
| ZXMS+6006S | ZXMS6006SG | SOT223 | 4 | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET |  |
|
| ZXMS+6006D | ZXMS6006DT8 | SM8 | 8 | 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
|
| ZXMS+6006D | ZXMS6006DG | SOT223 | 4 | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
|
| Z5006QI1 | AOZ5006QI-01 | QFN6x6-40L-EP3 | 0 | 35A DrMOS Power Module | |
|
| Z5006QI | AOZ5006QI | QFN6x6-40L-EP3 | 0 | 35A DrMOS Power Module | |
|
| X006 | R5328K006A | Ric | DFN2020-8 | 8 | LDO, Dual out, Vout1/Vout2=1.2V/1.8V±1%, 150mA, +CE, ECO | |
| W006 | R5328K006B | Ric | DFN2020-8 | 8 | LDO, Dual out, Vout1/Vout2=1.2V/1.8V±1%, 150mA, +CE, ECO | |
| V1F006S | CGHV1F006S | DFN3x4-12 | 0 | 6 W, DC - 18 GHz, 40V, GaN HEMT | |
|
| V006 | R5326K006A | Ric | PLP1820-6 | 0 | LDO, Dual out, sep. +CE, Vo1=1.8V, Vo2=3.3V, 150mA | |
| U006 | R5326K006B | Ric | DFN1820-6 | 6 | LDO, Dual out, V1=1.8V±1%, V2=3.3V±1%, 150mA, +CE, CL | |
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Shenzhen Icsuns Technology Co., Ltd has been specializing in the supply chain of components for 20 years, headquartered in Shenzhen, Guangdong. It is a global distributor of semiconductor and electronic components enterprises, authorized by multiple well-known manufacturers to distribute its products. It is a comprehensive enterprise leading in providing component products, services, and solutions. We have successfully served over 3000 domestic and foreign enterprises and have become one of the most professional semiconductor and component suppliers in Asia. We not only provide customers with high-performance and reliable products, but also continuously improve our technical support and value-added services to meet their higher requirements.
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